Method for producing group 3-5 compound semiconductor

摘要

Disclosed is a method for producing a group 3-5 compound semiconductor, which comprises a step wherein a group 3 raw material, a group 5 raw material, a carrier gas, and if necessary other raw materials are supplied into a furnace for growing a group 3-5 compound semiconductor on a substrate within the furnace by metal-organic vapor deposition. This method is characterized in that the group 3 raw material and the group 5 raw material are supplied into the furnace separately, and hydrogen halide is supplied into the furnace together with a carrier gas or a raw material other than the group 5 raw material.