| 摘要 |
<p>PURPOSE: A method for manufacturing transistor of semiconductor device is provided to reduce the aspect ratio of the gate and prevent the mask pattern for the dopant implanting process from remaining between the gates. CONSTITUTION: The laminating structure of the conductive layer pattern and the poly layer pattern including the recess(113) structure is formed on the substrate(111). The lightly doped drain and heavily doped impurity region are formed. The multi-layered insulating layer(117) is formed on the gate surface. The insulating layer(119) for the hard mask is formed in the multi-layered insulating layer. The insulating layer for the hard mask is etched the first and the hard mask pattern are formed. The multi-layered insulating layer is etched and the second and the contact hole for the landing plug is formed.</p> |
