MEMORY DEVICE AND MEMORY PROGRAMMING METHOD

摘要

PURPOSE: A memory device and a memory programming method are provided to reduce a width of dissemination of threshold voltage of a memory cell by using a programming part and a controller. CONSTITUTION: A memory cell array(110) comprises a plurality of memory cells. A programming part(120) applies a plurality of pulses corresponding to program voltage to a gate terminal of each memory cell. The programming part applies program condition voltage to a bit line connected to a memory cell having threshold voltage lower than verification voltage among the memory cells. The programming part stores data in each memory cell by varying the threshold voltage of each memory cell. A controller(130) increases the program voltage at each pulse as much as a first increment during a first time interval. The controller increases the program voltage at each pulse as much as a second increment during a second time interval. An identification unit(140) identifies the memory cell having the threshold voltage lower than the verification voltage among the memory cells.