| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve yield of a semiconductor device and to prevent a defect by forming a supporting layer pattern after dividing a die of an edge region according to a region. CONSTITUTION: A sacrificial insulation film is formed on a wafer in which a central region and an edge region are included. A supporting layer is formed on the sacrificial insulation film. A bottom electrode region is formed by etching the supporting layer and the sacrificial insulation film. A bottom electrode is formed in the bottom electrode region. A first supporting layer pattern is formed by etching the supporting layer of the central region of the wafer through a mask(500). A second supporting layer pattern is formed by etching the supporting layer of the edge region through the mask.
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