| 摘要 |
PURPOSE: A non-volatile memory device and an operation method thereof are provided to improve stability through reduction of peak currents by controlling a pre-charge operation and a discharge operation of a bit line. CONSTITUTION: A first pre-charging unit(213) includes bit line selection parts(214) connected to each bit line. A VIRPWR controller(230) includes a VIRPWR output unit(231) and an output control unit(232). The VIRPWR output unit includes a second PMOS transistor(P2) and a second NMOS transistor(N2). The output control unit comprises a comparator(COM), a first PMOS transistor(P1), a first NMOS transistor, a first resistance(R1) and a second resistance(R2). The bit line selection part comprises third and fourth NMOS transistors(N3,N4). |
