METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the loss of a device isolation film by a nitride film remaining on the device isolation film by forming a landing plug contact by extending an oxide film on the device isolation film by an etching process. CONSTITUTION: A semiconductor substrate including a device isolation film(104) and an active area(102) limited by the device isolation film is provided. A recess gate(106) is formed on the device isolation film and the active area. An insulation film and an interlayer insulation film(108) are formed to cover the gates. A hole to expose the active area in one side of the gate is formed. A first contact hole is formed by removing the interlayer insulation film on the device isolation film adjacent to the hole until the insulation film is exposed. A second contact hole is formed to expose the active area of the other side of the gate. The landing plug contact is formed in the first contact hole and the second contact hole.