| 摘要 |
PURPOSE: An electrostatic discharge circuit is provided to protect an internal circuit of a semiconductor device stably from the static electricity by lowering the operation start voltage of a LVTSCR(Low Voltage Silicon Controlled Rectifier) for discharging the static electricity. CONSTITUTION: A first diffusion area(340) is formed in a first type well(320) and is connected to an input-output pad connected to an internal circuit(250). A second diffusion area(342) is formed in a boundary of the first type well and a second type well(330) and is connected to a power voltage pad. A third diffusion area(344) is connected to a ground voltage pad and is formed in the second type well. A fourth diffusion area(346) is formed in the second type well to be separated from the third diffusion area. One end of a capacitor(201) is connected to the second diffusion area. The other end of the capacitor is connected to the third and fourth diffusion areas. The first type well is an N well area. The second type well is a P well area.
|
