| 摘要 |
<p>This invention provides a solution for growing a charge-transfer complex salt M<Sup>+</Sup>A<Sup>-</Sup> onto the surface of a metal M, comprising:
(a) an organic solvent comprising one nitrile function,
(b) an electron acceptor molecule A;
(c) a co-solvent wherein said at least one electron acceptor molecule A is more soluble than said charge-transfer complex salt M<Sup>+</Sup>A<Sup>-</Sup>, and
(d) a salt additive selected from the group consisting of M<Sup>+</Sup>Y<Sup>-</Sup> and E<Sup>+</Sup>A<Sup>-</Sup> wherein Y<Sup>-</Sup> and E<Sup>+</Sup> are non-reactive counter-ions, A<Sup>-</Sup> is the anion corresponding to said acceptor molecule A and M<Sup>+</Sup> is the cation corresponding to the metal M.</p><p><Paragraphs id="pa02" num="0002" xmlns:base="http://www.sipo.gov.cn/XMLSchema/base">This invention also provides a CMOS wafer comprising a metal layer M, an insulator layer (4) above said metal layer M and via holes (1) extending through said insulator layer (4) and through a portion Hc of said metal layer M, said via holes being at least partially filled with a complex charge transfer salt M+A- layer of thickness HMA, wherein A- is the anion corresponding to an acceptor molecule A, and wherein said portion HC has a depth of 10 to 50 nm.
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