发明名称 |
High-k dielectric metal gate device structure and method for forming the same |
摘要 |
A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric. A process for simultaneously forming the NMOS and PMOS gate structures includes forming the high-k gate dielectric material, and the work function tuning layer thereover, then selectively removing the work function tuning layer from the NMOS region and carrying out a plasma treatment to selectively dope the high-k gate dielectric material in the NMOS region with a dopant impurity while the high-k gate dielectric in the PMOS region is substantially free of the dopant impurity.
|
申请公布号 |
US7625791(B2) |
申请公布日期 |
2009.12.01 |
申请号 |
US20070926830 |
申请日期 |
2007.10.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TSENG JOSHUA;LIN KANG-CHENG;YANG JI-YI;HUANG KUO-TAI;CHEN RYAN CHIA-JEN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|