发明名称 |
NON VOLATILE MEMORY DEVICD AND METHOD OF TESTING THE SAME |
摘要 |
PURPOSE: A non-volatile memory device and a test method are provided to reduce test time by performing a test using a multi DUT operation in a separated state of a test pin during a packaging bonding step. CONSTITUTION: A memory cell array(110) comprises memory blocks consisting of a plurality of memory cells. A page buffer part(120) comprises page buffers. The page buffers temporarily stores programmed data in the memory cell. An Y decoder(130) offers a data input/output path of the page buffers. An X decoder(140) selects the memory block and word line of the memory cell array. A voltage providing part(150) generates operation voltage for performing a data read operation or program operation. A controller(160) generates a control signal for the program operation or data read operation. A clock control part(180) outputs a control signal in a general operation. The clock control part provides a clock, inputted through a WP pin, as a test clock signal in a test mode. |
申请公布号 |
KR20090122874(A) |
申请公布日期 |
2009.12.01 |
申请号 |
KR20090008803 |
申请日期 |
2009.02.04 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
SON, JI HYE;PARK, SEONG HUN;KIM, DUCK JU |
分类号 |
G11C29/00;G01R31/26;G11C16/34;H01L21/66 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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