发明名称 NON VOLATILE MEMORY DEVICD AND METHOD OF TESTING THE SAME
摘要 PURPOSE: A non-volatile memory device and a test method are provided to reduce test time by performing a test using a multi DUT operation in a separated state of a test pin during a packaging bonding step. CONSTITUTION: A memory cell array(110) comprises memory blocks consisting of a plurality of memory cells. A page buffer part(120) comprises page buffers. The page buffers temporarily stores programmed data in the memory cell. An Y decoder(130) offers a data input/output path of the page buffers. An X decoder(140) selects the memory block and word line of the memory cell array. A voltage providing part(150) generates operation voltage for performing a data read operation or program operation. A controller(160) generates a control signal for the program operation or data read operation. A clock control part(180) outputs a control signal in a general operation. The clock control part provides a clock, inputted through a WP pin, as a test clock signal in a test mode.
申请公布号 KR20090122874(A) 申请公布日期 2009.12.01
申请号 KR20090008803 申请日期 2009.02.04
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SON, JI HYE;PARK, SEONG HUN;KIM, DUCK JU
分类号 G11C29/00;G01R31/26;G11C16/34;H01L21/66 主分类号 G11C29/00
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