| 摘要 |
PURPOSE: A non-volatile memory device and a test method thereof are provided to reduce the whole test time by reducing the number of paths connected to a tester on a wafer test. CONSTITUTION: A memory unit(100) performs a read function for stored data and a data storing function. A first buffer part is inputted with a first test signal. A pattern selection part(400) outputs first to fourth pattern selection signals and pattern selection termination signals in response to first to fourth test signals. An order generator is activated by one of the first to fourth pattern selection signals and the pattern selection termination signals. The order generator generates an instruction for test using corresponding pattern data. By using test result data outputted from an input/output unit of the memory unit, a comparison unit(600) confirms a generating state of an error. The comparison unit outputs first to third output data to first to third input/output buffers. |
