发明名称 Thin film transistor array substrate, method for manufacturing the same and system for inspecting the substrate
摘要 Disclosed is a thin film transistor substrate and a system for inspecting the same. The thin film transistor substrate comprises gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor layer formed over the gate insulation layer; data wiring formed over the gate insulation layer and including data pads; a protection layer covering the data wiring; auxiliary pads connected to the data pads through contact holes formed in the protection layer; and a pad auxiliary layer formed protruding a predetermined height under the data pads. The inspection system for determining whether a thin film transistor substrate is defective, in which the thin film transistor substrate comprises gate wiring including gate lines, gate electrodes and gate pads, and data wiring including source electrodes and drain electrodes, includes a probe pin for contacting the gate pads or data pads and transmitting a corresponding signal, wherein a contact tip at a distal end of the probe pin for contacting the gate pads or the data pads is rounded, and a radius of the rounded contact tip is 2 mum or less, or the rounded contact tip is coated with gold (Au).
申请公布号 US7626203(B2) 申请公布日期 2009.12.01
申请号 US20070668345 申请日期 2007.01.29
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 KONG HYANG-SHIK;HUH SUNG-WOOK;PARK YOUNG-BAE
分类号 G02F1/136;H01L29/76;H01L21/00;H01L21/3213;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/04 主分类号 G02F1/136
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