| 摘要 |
A test methodology for testing a memory device with a RSR feature is disclosed. For example, a method for testing a memory device having at least one memory cell group, at least one redundant memory cell group, and a defect detect register is disclosed. In one embodiment, the method applies at least one memory test to the at least one memory cell group; and applies a defect detect register test to the defect detect register.
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