发明名称 HIGH FREQUENCY SWITCH WITH LOW LOSS, LOW HARMONICS AND IMPROVED LINEARITY PERFORMANCE
摘要 A switch element includes a field effect transistor (FET) structure formed on a substrate, the FET structure having a drain, a gate and a source, the drain having a drain capacitance, the gate having a gate capacitance, the source having a source capacitance and an electrical connection to couple the drain capacitance, gate capacitance and the source capacitance to the substrate.
申请公布号 KR20090122965(A) 申请公布日期 2009.12.01
申请号 KR20097019807 申请日期 2008.02.22
申请人 SKYWORKS SOLUTIONS, INC. 发明人 PRIKHODKO DIMA;MASON JEROD F.;ZHOU GOULIANG;TKACHENKO GENE A.;SPRINKLE STEVEN C.;KLIMASHOV OLEKSIY
分类号 H01P1/15;H01L21/822 主分类号 H01P1/15
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