发明名称 |
Phase-change random access memory and programming method |
摘要 |
A programming method for a phase-change random access memory (PRAM) may be provided. The programming method may include determining an amorphous state of a chalcogenide material using programming pulses to form programming areas having threshold voltages corresponding to logic high and logic low, and/or controlling a trailing edge of programming pulses during programming to control a quenching speed of the chalcogenide material so as to adjust a threshold voltage of the chalcogenide material. Accordingly, programming pulses corresponding to logic low or logic high may have uniform magnitudes regardless of a corresponding logic level. Accordingly, reliability of a PRAM device may be improved.
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申请公布号 |
US7626859(B2) |
申请公布日期 |
2009.12.01 |
申请号 |
US20070657649 |
申请日期 |
2007.01.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SUH DONG-SEOK;LEE EUN-HONG;NOH JIN-SEO |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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