| 摘要 |
A method of forming at least one undercut structure in a semiconductor substrate. The method comprises providing a semiconductor substrate, forming at least one doped region in the semiconductor substrate, and removing the at least one doped region to form at least one undercut structure in the semiconductor substrate. The at least one undercut structure may include at least one substantially vertical shelf, at least one substantially horizontal shelf, and at least one faceted surface. The at least one doped region may be formed by implanting an impurity in the semiconductor substrate, which is, optionally, annealed. The at least one doped region may be removed selective to the undoped portion of the semiconductor substrate by at least one of wet etching or dry etching. An intermediate semiconductor structure that comprises a single crystalline silicon substrate and at least one undercut structure formed in the single crystalline silicon substrate is also disclosed.
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