发明名称 Semiconductor memory device
摘要 During a stand-by state in which power supply is cut off, a high-voltage power supply control circuit isolates a global negative voltage line transmitting a negative voltage and a local negative voltage line provided corresponding to each respective sub array block from each other and isolates a global ground line and a local ground line transmitting a ground voltage from each other. These local ground line and local negative voltage line are charged to a high voltage level through a high voltage line before cut-off from the corresponding power supply. A leakage current path from a word line to the negative voltage line or the ground line is cut off, so that the word line in a non-selected state can reliably be maintained at a non-selection voltage. Thus, in a low power consumption stand-by mode, data stored in a memory cell can be held in a stable manner.
申请公布号 US7626883(B2) 申请公布日期 2009.12.01
申请号 US20080149549 申请日期 2008.05.05
申请人 RENESAS TECHNOLOGY CORP. 发明人 SHIMANO HIROKI;ARIMOTO KAZUTAMI
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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