发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency is inferior in a channel region of the n-channel transistor. Accordingly, the problem of inferior gettering efficiency in the n-channel TFT can be solved by providing at an end of its source/drain regions a highly efficient gettering region that contains an n-type impurity and a p-type impurity both with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.
|
申请公布号 |
US7625786(B2) |
申请公布日期 |
2009.12.01 |
申请号 |
US20050088888 |
申请日期 |
2005.03.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SHARP KABUSHIKI KAISHA |
发明人 |
MAKITA NAOKI;NAKAZAWA MISAKO;OHNUMA HIDETO;MATSUO TAKUYA |
分类号 |
G02F1/1368;H01L21/84;H01L21/20;H01L21/322;H01L21/336;H01L21/77;H01L27/08;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|