| 摘要 |
PURPOSE: A method for forming a copper wiring of a semiconductor device is provided to reduce a use amount of a copper plating solution by plating copper in only a via hole and a trench. CONSTITUTION: An inter metal dielectric oxide film is formed on a semiconductor substrate(S1). A via hole and a trench are formed on the inter metal dielectric oxide film(S2). A barrier metal film is formed according to an inner wall of the via hole and the trench(S3). A copper seed film is formed on the barrier metal film(S4). A photoresist is deposited on the copper seed film positioned in the inner wall of the via hole and the trench(S5). A copper oxide film is formed on the copper seed film of a region except for the inner wall of the via hole and the trench(S6).
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