发明名称 |
MANUFACTURING METHOD FOR DISPLAY |
摘要 |
PURPOSE: A manufacturing method of a display device for reducing the load of a dry etching process is provided to improve the performance of the device by safely patterning metal layer coated on an oxide semiconductor layer. CONSTITUTION: A gate(102) is formed on a first substrate. A first insulating layer(103) is formed on the gate. An oxide semiconductor layer(104) is formed on the first insulating layer. A first metal layer(105) is formed on the oxide semiconductor layer. A second metal layer(106) is formed on an ohmic contact layer. The second metal layer is etched to a wet type. A source and drain etches the first metal layer. |
申请公布号 |
KR20090122815(A) |
申请公布日期 |
2009.12.01 |
申请号 |
KR20080048804 |
申请日期 |
2008.05.26 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
SEO, HYUN SIK;BAE, JONG UK;KIM, DAE HWAN |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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