| 摘要 |
<p>PURPOSE: An exposure mask for forming a semiconductor device pattern and a manufacturing method thereof are provided to improve resolution by performing an optical proximity effect correction at an isolated space of a semiconductor device with MUV(Mid Ultra Violet) light and a binary mask. CONSTITUTION: In an exposure mask for forming a semiconductor device pattern and a manufacturing method thereof, a semiconductor device pattern having an isolated line(50) and an isolated space(40) at an exposure mask(100) is formed. A mask pattern is formed on a part of a transmissive substrate depending on a device pattern. The isolated space of the semiconductor device pattern has light transmittance of 10-20%. A first layer(10) is formed with quartz passing a light as it is. A second layer(20) is formed with a material having transmittance of 10-20%. A third layer(30) is formed with chrome blocking light.</p> |
