PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A phase-change memory device and a method for manufacturing the same are provided to prevent the dispersion of p-type impurity to inside substrate or the heavily doped impurity region by forming an N-type trap film between N-type conductive films. CONSTITUTION: In a phase-change memory device and a method for manufacturing the same, a trap film(115) is formed with a first conductivity type dopant inside a substrate(100). A heavily doped impurity region(110) includes the trap film inside it, and the inter-layer insulating film(120) is formed on the semiconductor substrate. A conductive impurity is formed with the same conductive impurity as a trap film a second conductive type impurity opposite to the conductive impurity are laminated to form a PN diode pattern(130). A first conductivity type dopant of the trap film gathers the second conductive impurity of the PN diode pattern. The heavily doped impurity region comprises the impurity of the same conductive type as the trap film.