| 摘要 |
PROVIDED IS A METHOD FOR PRODUCING A SEMICONDUCTOR CHIP, COMPRISING APPLYING A PHOTOTHERMAL CONVERSION LAYER ON A LIGHT-TRANSMITTING SUPPORT, PROVIDED THAT UPON IRRADIATION OF RADIATION ENERGY, THE PHOTOTHERMAL CONVERSION LAYER CONVERTS THE RADIATION ENERGY INTO HEAT AND DECOMPOSES DUE TO THE HEAT; LAMINATING THE SEMICONDUCTOR WAFER AND THE LIGHT-TRANSMITTING SUPPORT THROUGH A PHOTOCURABLE ADHESIVE BY PLACING THE CIRCUIT FACE AND THE PHOTOTHERMAL CONVERSION LAYER TO FACE EACH OTHER, THEREBY FORMING A LAMINATED BODY HAVING A NON-CIRCUIT FACE ON THE OUTSIDE; GRINDING THE NON-CIRCUIT FACE OF THE SEMICONDUCTOR WAFER UNTIL THE SEMICONDUCTOR WAFER REACHES A DESIRED THICKNESS; DICING THE GROUND SEMICONDUCTOR CHIPS; IRRADIATING RADIATION ENERGY FROM THE LIGHT-TRANSMITTING SUPPORT SIDE TO DECOMPOSE THE PHOTOTHERMAL CONVERSION LAYER, THEREBY CAUSING SEPARATION INTO A SEMICONDUCTOR CHIPS HAVING THE ADHESIVE LAYER AND A LIGHT-TRANSMITTING SUPPORT; AND OPTIONALLY REMOVING THE ADHESIVE LAYER FROM THE SEMICONDUCTOR CHIPS.
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