发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICES, AND FORMATION APPARATUS FOR SEMICONDUCTOR WAFER DICING MASKS
摘要 ON A MASK PLACEMENT-SIDE SURFACE OF A SEMICONDUCTOR WAFER IN WHICH A PLURALITY OF SEMICONDUCTOR DEVICES ARE FORMED, A MASK IS PLACED, WHILE DICING LINES FOR DICING THE SEMICONDUCTOR WAFER INTO THE RESPECTIVE SEPARATE SEMICONDUCTOR DEVICES ARE DEFINED AND A SURFACE OF A FLAWED SEMICONDUCTOR DEVICE AMONG THE RESPECTIVE SEMICONDUCTOR DEVICES IS PARTIALLY EXPOSED, AND THEN PLASMA ETCHING IS APPLIED TO THE MASK PLACEMENT-SIDE SURFACE OF THE SEMICONDUCTOR WAFER SO AS TO DICE THE SEMICONDUCTOR WAFER INTO THE RESPECTIVE SEMICONDUCTOR DEVICES ALONG THE DEFINED DICING LINES, AND AN EXPOSED PORTION OF THE FLAWED SEMICONDUCTOR DEVICE IS REMOVED SO AS TO FORM A REMOVED PORTION AS A FLAWED SEMICONDUCTOR DEVICE DISTINGUISHING MARK.
申请公布号 MY140100(A) 申请公布日期 2009.11.30
申请号 MY2005PI03539 申请日期 2005.07.29
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HIROSHI HAJI;KIYOSHI ARITA;TERUAKI NISHINAKA
分类号 H01L21/301 主分类号 H01L21/301
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