| 摘要 |
PURPOSE: A phase change memory device compensating temperature change is provided to improve yield of the phase change memory device by constantly maintaining the margin between the sensing voltage and the driving voltage of the cell. CONSTITUTION: A cell array reads and writes the data by including a phase change resistor element. A temperature change sensing circuit(100) outputs a temperature detection voltage by detecting the temperature change state inside a cell array. A temperature change correspondence sensing voltage controller(200) outputs a bit line clamp signal corresponding to the voltage level change of the temperature detection voltage. A temperature change correspondence main reference voltage supply unit(300) outputs a reference voltage corresponding to the voltage level change of the temperature detection voltage. The sense amplifier compares and amplifies the sensing voltage and the reference voltage applied from the cell array. The sense amplifier controls the range of the sensing voltage level according to the bit line clamp signal.
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