发明名称 |
PROCESS FOR PRODUCING MODIFIED POROUS SILICA FILM, MODIFIED POROUS SILICA FILM OBTAINED BY THE PROCESS, AND SEMICONDUCTOR DEVICE EMPLOYING THE MODIFIED POROUS SILICA FILM |
摘要 |
<p>A hydrophobic compound having at least one each of hydrophobic group (an alkyl group having 1 to 6 carbon atoms or a -C 6 H 5 group) and polymerizable group (a hydrogen atom, a hydroxyl group or a halogen atom) is allowed to undergo a gas-phase polymerization reaction, under reduced pressure (of not more than 30 kPa), in the presence of a raw porous silica film and to thus form a modified porous silica film wherein a hydrophobic polymer thin film is formed on the inner walls of holes present in the raw porous silica film. The resulting porous silica film has a low relative dielectric constant and a low refractive index and the silica film is likewise improved in the mechanical strength and hydrophobicity. A semiconductor device is produced using the porous silica film.</p> |
申请公布号 |
HK1120333(A1) |
申请公布日期 |
2009.11.27 |
申请号 |
HK20080108693 |
申请日期 |
2008.08.07 |
申请人 |
ULVAC, INC.;MITSUI CHEMICALS, INC. |
发明人 |
NOBUTOSHI FUJII;KAZUO KOHMURA;HIDENORI MIYOSHI;HIROFUMI TANAKA;SHUNSUKE OIKE;MASAMI MURAKAMI;TAKESHI KUBOTA;YOSHITO KURANO |
分类号 |
C01B;H01L |
主分类号 |
C01B |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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