发明名称 DEPOSITION SOURCE UNIT, DEPOSITION APPARATUS AND TEMPERATURE CONTROL APPARATUS FOR DEPOSITION SOURCE UNIT
摘要 [PROBLEMS]To accurately control a film forming speed.[MEANS FOR SOLVING PROBLEMS]A deposition apparatus (20) is provided with a deposition source unit (100), a transporting mechanism (200) for transporting an evaporated film forming material; and a blow out mechanism (400) for blowing out the transported film forming material. The deposition source unit (100) is provided with a deposition source assembly (As), a housing (Hu) and a water-cooling jacket (150). In the deposition source assembly (As), a gas supply mechanism (105), a gas introducing section (115) and a first material evaporating chamber (U) are integrally formed. Argon gas is introduced from a plurality of gas channels (105p) formed on the gas supply mechanism (105) to the first material evaporating chamber (U). A heater (120) of the housing (Hu) heats the film forming material in the first material evaporating chamber (U) and a carrier gas flowing in the gas channels (105p). The evaporated film forming material is carried by the argon gas. The water-cooling jacket (150) is arranged at a prescribed distance from the outer circumference surface of the housing (Hu) to cool the deposition source unit (100).
申请公布号 KR20090122398(A) 申请公布日期 2009.11.27
申请号 KR20097021981 申请日期 2008.03.25
申请人 TOKYO ELECTRON LIMITED 发明人 HASEGAWA KOYU;ONO YUJI
分类号 C23C14/24;C23C16/448;H01L51/50;H05B33/10 主分类号 C23C14/24
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