| 摘要 |
FIELD: chemistry. ^ SUBSTANCE: invention relates to bismuth titanate based compositions, which are designed for making ferroelectric material and can be used in microelectronics for improving reprogrammable memory devices, as well as in acousto- and optoelectronics for modernising radio capacitors, piezoelectric transducers and filters, hydroacoustic devices, pyroelectric detectors of infrared radiation. The composition for making ferroelectric material has the following components, mol %: Bi2O3 17.4 to 22.8; LaCl3 8.71 to 11.4; TiO2 32.7 to 42.7; KNO3 32.1 to 41.2. Samples obtained from the said composition had dielectric permittivity ranging from 220 to 240 in the frequency range from 1 to 1000 kHz at room temperature. ^ EFFECT: increased dielectric permittivity of materials due to increased uniformity of composition of ferroelectric materials. ^ 1 tbl, 1 dwg |
