PHASE CHANGE MEMORY DEVICE, MANUFACTURING METHOD THEREOF AND MULTIMEDIA STORAGE DEVICE USING THE SAME

摘要

PURPOSE: A phase change memory device, a forming method thereof, and a multimedia storage device using the same are provided to improve program speed and efficiency by omitting the programming process of the code data in a package level. CONSTITUTION: A ROM code unit writes ROM code data. A ROM code unit programs the ROM code data according to the interruption of a current path of a phase change resistor element. The phase change memory unit reads and writes the data by including the phase change resistor element. The switching element is formed in an upper side of a word line. A phase change material(GST) is formed in the upper side of the switching element and is electrically blocked from the switching element. An upper electrode(TE) is formed on the upper side of the phase change material. A bit line(BL) is connected to the upper electrode through an upper electrode contact.