| 摘要 |
PROBLEM TO BE SOLVED: To obtain an insulating film which has high mechanical strength, high stability in air atmosphere, high thermal stability, and a low relative dielectric constant. SOLUTION: When the insulating film is formed by a plasma CVD method by using an insulating film material for plasma CVD made of a silicon compound, such as, dicyclopentyl dimethoxysilane and dicyclohexyl dimethoxysilane, an oxidant, such as oxygen is accompanied; a filming temperature is set to 200 to 300°C; and the insulating film is irradiated with ultraviolet rays of 200 nm or longer. COPYRIGHT: (C)2010,JPO&INPIT
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