发明名称 |
METHOD OF MANUFACTURING THIN FILM TRANSISTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor. SOLUTION: The method of manufacturing a thin film transistor includes: a first step of providing a carbon nanotube array; a second step of pulling out at least one carbon nanotube film from the carbon nanotube array; a third step of providing an insulating substrate and placing at least one carbon nanotube film on a surface of the insulating substrate to form a semiconducting layer; a fourth step of forming a source electrode and a drain electrode on the semiconductor layer separately from each other and electrically connecting the source electrode and the drain electrode to the semiconductor layer; a fifth step of forming an insulating layer on the semiconductor layer; and a sixth step of forming a gate electrode on a surface of the insulating layer to form a thin film transistor. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2009278105(A) |
申请公布日期 |
2009.11.26 |
申请号 |
JP20090117601 |
申请日期 |
2009.05.14 |
申请人 |
QINGHUA UNIV;HON HAI PRECISION INDUSTRY CO LTD |
发明人 |
RYO KAI;JIANG KAILI;FAN FENG-YAN |
分类号 |
H01L21/336;H01L21/205;H01L29/06;H01L29/786;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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