| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in electromigration resistance without being accompanied by deterioration in stress migration resistance while keeping wiring resistance of a conductor containing Cu low, and a method for manufacturing the same. <P>SOLUTION: The semiconductor device includes an interlayer insulation film 36 formed above a semiconductor substrate 10, the conductor 50 containing Cu formed in the interlayer insulation film 36, and a barrier metal film 46 formed between the interlayer insulation film 36 and the conductor 50 and formed of a multilayer film of a Ti film 42 and a Ta film 44, and an interface layer 54 containing Ti and Si is formed on the surface of the conductor 50. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
