| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a silicon single crystal, in which damage on a crucible surface is suppressed to achieve excellent stabilization of the crystal quality by controlling the dissolving time of a silicon raw material supplied as initial charging. SOLUTION: The production method of a silicon single crystal by CZ method comprises dissolving a silicon raw material supplied as initial charging, and dissolving a silicon raw material additionally supplied to satisfy a target charge amount to form a melt in a quartz crucible, and then producing a silicon single crystal, wherein the dissolving time of the silicon raw material supplied as initial charging to the quartz crucible is controlled to 1/3 to 1/2 of the total dissolving time of dissolving the target charge amount. This production method of a silicon single crystal is optimal for pulling a silicon single crystal having a diameter as large as 300 mm or more. COPYRIGHT: (C)2010,JPO&INPIT
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