| 摘要 |
A nonvolatile memory device includes a clock input stage configured to receive a clock signal for a test, a control signal output unit configured to output data input-output (IO) control signals according to the clock signal, n number of IO stages for data IO, and n number of storage units connected to the respective n number of IO stages and configured to temporarily store data to be exchanged between the respective n number of IO stages and internal circuits according to the respective data IO control signals. The n number of storage units are further commonly connected to a first IO stage of the n number of IO stages and configured to sequentially input or output data through the first IO stage in a test mode according to the respective data IO control signals.
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