发明名称 Process management method and process management data for semiconductor device
摘要 A process management method for managing manufacturing variability of an interconnection included in a semiconductor device is provided. The process management method includes: calculating interconnect resistance and interconnect capacitance regarding an interconnection included in the semiconductor device, under a condition that manufacturing variability of a width and a thickness of the interconnection is expressed by points on a predetermined circle of equal probability of a joint probability density function; and defining, based on the calculated interconnect resistance and interconnect capacitance, a variation range of interconnect resistance and interconnect capacitance caused by manufacturing variability. The variation range is defined two-dimensionally in a coordinate system where a first axis represents interconnect resistance and a second axis represents interconnect capacitance.
申请公布号 US2009291514(A1) 申请公布日期 2009.11.26
申请号 US20090453336 申请日期 2009.05.07
申请人 NEC ELECTRONICS CORPORATION 发明人 ASAI YOSHIHIKO
分类号 H01L21/66;G06F17/50;G06F19/00;H01L21/3205;H01L21/768;H01L21/82;H01L23/522 主分类号 H01L21/66
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