发明名称 |
LOW CONTACT RESISTANCE SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME |
摘要 |
Low contact resistance semiconductor devices and methods for fabricating such semiconductor devices are provided. In accordance with one exemplary embodiment, a method comprises depositing an insulating material overlying a metal silicide region and etching a contact opening within the insulating material and exposing the metal silicide region. The contact opening is at least partially bottom-filled with substantially pure cobalt. A conductor is deposited in the contact opening if, after the step of at least partially bottom-filling, the contact opening is not filled with the substantially pure cobalt.
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申请公布号 |
US2009289370(A1) |
申请公布日期 |
2009.11.26 |
申请号 |
US20080124879 |
申请日期 |
2008.05.21 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER PAUL R.;KNORR ANDREAS H. |
分类号 |
H01L23/48;H01L21/336;H01L21/44 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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