发明名称 TUNNEL JUNCTION RESISTOR FOR HIGH RESISTANCE DEVICES AND SYSTEMS USING THE SAME
摘要 A device in one embodiment includes a plurality of tunnel junction resistors coupled in series; a first lead coupled to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupled to another end of the plurality of tunnel junction resistors coupled in series. A device in another embodiment includes a magnetoresistive sensor; a plurality of tunnel junction resistors coupled in series; a first lead coupling one end of the magnetoresistive sensor to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupling another end of the magnetoresistive sensor to another end of the plurality of tunnel junction resistors coupled in series. A system in yet another embodiment includes a semiconductor device; a plurality of tunnel junction resistors coupled in series; a first lead coupling one end of the semiconductor device to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupling another end of the semiconductor device to another end of the plurality of tunnel junction resistors coupled in series.
申请公布号 US2009289626(A1) 申请公布日期 2009.11.26
申请号 US20080123989 申请日期 2008.05.20
申请人 IBEN ICKO E T 发明人 IBEN ICKO E.T.
分类号 G01R33/02;H01L29/06 主分类号 G01R33/02
代理机构 代理人
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