发明名称 SEMICONDUCTOR OF OXYNITRIDE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor which includes both of high mobility and stability to environment, and also includes light-detecting sensitivity to a light in a visible region, and to provide a semiconductor device therefor. <P>SOLUTION: The semiconductor of an oxynitride is formed from an oxynitride of a metal. The oxynitride includes Zn and at least one element selected from In, Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W and Al, wherein an atomic composition ratio of N in the oxynitride, which is expressed by N/(N+O), is 7 atom% to 80 atom%. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009275236(A) 申请公布日期 2009.11.26
申请号 JP20080115730 申请日期 2008.04.25
申请人 CANON INC 发明人 ITAGAKI NAHO;IWASAKI TATSUYA;WATANABE TAKETOSHI;DEN TORU
分类号 C23C14/06;H01L21/363;H01L29/26;H01L29/786;H01L31/04;H01L31/10 主分类号 C23C14/06
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