| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the water resistance and the reliability of a semiconductor device by reducing the degree of peeling of a film. <P>SOLUTION: Over a substrate, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating film, an organic insulating layer, and a third inorganic insulating layer are provided sequentially in lamination. The second inorganic insulating layer is provided in contact with the first inorganic insulating layer in an opening provided in the semiconductor element layer, the third inorganic insulating layer is provided in contact with the second inorganic insulating layer in an opening provided in the organic insulating layer, and in a plane where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, a plurality of irregularities or openings are provided in the second inorganic insulating layer. Further a plurality of irregularities are provided on the surface of the third inorganic insulating layer in a region that overlaps the plurality of irregularities or openings provided in the second inorganic insulating layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
