| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus capable of depositing a uniform thin film by eliminating any temperature difference on a surface of a substrate on which the thin film is deposited. SOLUTION: In the vapor phase growth apparatus having a rotation/revolution structure in which a heating means (a heater 16) is provided on a back side of a loading plate 14 to be respectively held by a plate receiving stand 13 turnably provided on a susceptor 12, a center part of a bottom surface of the loading plate is ground, and the thickness of the center part of the loading plate is set to be smaller than the thickness of an outer peripheral part of the loading plate. The temperature of the upper side of the loading plate is unified, the surface temperature of the substrate to be held on the upper surface of the loading plate is uniformized to deposit a homogeneous thin film. COPYRIGHT: (C)2010,JPO&INPIT |
