| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for ensuring sufficient gate overlap with no deterioration of short channel characteristics, and having an S/D extension layer of low electric resistance, and to provide a method of manufacturing the same. Ž<P>SOLUTION: A pair of first diffusion layers 5a, which are shallow surface layers of a semiconductor substrate, are formed in part of a region inwardly from lower both ends of the gate electrode 4. A pair of second diffusion layers 5b, which are deeper surface layers than the first diffusion layers 5a of the semiconductor substrate, are formed in a region under a sidewall 7 and externally adjacent to the first diffusion layers 5a. In addition, a pair of third diffusion layers 6, which are deeper surface layers than the second diffusion layers 5b of the semiconductor substrate, are formed in a region externally adjacent to the second diffusion layers 5b. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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