发明名称 CHARGED BEAM LITHOGRAPHY SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a charged beam lithography system capable of performing precise lithography by uniformizing temperature in a uniform heating plate 19 to suppress a temperature difference depending on a position in a sample 12. Ž<P>SOLUTION: The electron beam lithography system 11 has: an electron-optical barrel 16 for emitting electron beams; a uniform heating unit 17 comprising a uniform heating plate 19 formed at a lower portion of the electron-optical barrel 16, a first cooling pipe 21 disposed along the periphery of the uniform heating plate 19, and a second cooling pipe 21 that is disposed along the first cooling pipe 21 and has a coolant flowing in a direction opposite to that of a coolant flowing in the first cooling pipe; and a casing 14 having the electron-optical barrel 16 at an upper portion and an XY stage 13 for placing the sample 12 inside. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009278001(A) 申请公布日期 2009.11.26
申请号 JP20080129822 申请日期 2008.05.16
申请人 NUFLARE TECHNOLOGY INC 发明人 SAITO HIROYASU
分类号 H01L21/027;H01J37/141;H01J37/305 主分类号 H01L21/027
代理机构 代理人
主权项
地址