发明名称 |
Substrat und Herstellungsverfahren dafür sowie Dünnschicht-Strukturkörper |
摘要 |
A substrate is provided with a substrate main body made from silicon, and an oxide film for a base formed thereon. The oxide film includes a first oxide film made mainly of a thermal SiO<SUB>2 </SUB>film formed by thermally oxidizing silicon in the substrate main body, and a second oxide film made of a high-temperature oxide film deposited and formed thereon. Alternatively the second oxide film may be formed by TEOS. |
申请公布号 |
DE10196676(B4) |
申请公布日期 |
2009.11.26 |
申请号 |
DE2001196676 |
申请日期 |
2001.07.26 |
申请人 |
MITSUBISHI DENKI K.K. |
发明人 |
OKUMURA, MIKA;HORIKAWA, MAKIO;ISHIBASHI, KIYOSHI |
分类号 |
H01L21/316;B81B3/00;G01P15/08;G01P15/125;H01L29/84 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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