| 摘要 |
<p>PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to obtain stable rectification characteristic against the heat using an oxide semiconductor as the semiconductor of a rectification element of the nonvolatile memory device. CONSTITUTION: A plurality of component memory layers are stacked in a nonvolatile memory device(10). The component memory layers include a first wiring(50), a second wiring(80), and a stack structure(65). The second wiring is not parallel to the first wiring. The stack structure is provided between the first wiring and the second wiring and includes a memory layer and a rectification element. The rectification element has a Schottky junction on the interface between the electrode and the oxide semiconductor. The electrode and the oxide semiconductor include the metal.</p> |
