METHODS OF LASER ANNEALING A SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY

摘要

The present invention relates methods of laser annealing a semiconductor layer and semiconductor devices produced thereby. The method includes forming a nitrogen doped layer on the semiconductor layer (200), the nitrogen doped layer having a nitrogen concentration of at least 3 x 1020 atoms/cc, irradiating a first area of the nitrogen doped layer in a low oxygen environment with a laser beam (202) and irradiating a second area of the nitrogen doped layer in a low oxygen environment with a laser beam (204), a part of the second area overlapping with a part of the first area in a product region.