| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an alignment marker and an alignment method that allow inexpensive alignment of a reflective mask with a support structure thereof in order to cope with difficulty in executing the alignment of the reflective mask with the support structure thereof on the basis of the reflectivity difference between an absorbing layer and a reflective substrate by using long-wavelength light in a lithography projection apparatus using short-wavelength radiation. <P>SOLUTION: The alignment method includes a step in which an alignment marker 5, provided on a mask MA and juxtaposed with a pattern 3 to be projected on a substrate W while having a height difference, is irradiated with a light beam 4 emitted from a light source 7 in an alignment sensor 1, its reflected light is processed by an imaging optical element 8 and received by a detector 9, and the position of the height difference is detected so as to use it for alignment between the mask MA and a support MT. Therefore, the alignment marker 5 and the pattern 3 can be simultaneously manufactured in the same manufacturing process, a risk of poor alignment between both can be reduced, and lighting of the alignment marker 5 can be executed independently of lighting of the pattern 3 with an inexpensive light source 7, thereby achieving alignment in situ by providing the alignment sensor 1 in a lithographic apparatus. <P>COPYRIGHT: (C)2010,JPO&INPIT |
