| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer that increases the number of the reproduction of the wafer. <P>SOLUTION: A surface side chamfered surface 10d and a back side chamfered surface 10e of a silicon wafer 10 are formed asymmetrically relative to a virtual straight line an extending in the diameter direction of the wafer 10, at the position half the height of an outer edge surface 10c, and the height of the surface side chamfered surface 10d of the wafer 10 is made higher than the height of the back side chamfered surface 10e. Thereby, in a chamfered part of the wafer 10, the thickness of the chamfered part of the surface side chamfered surface becomes thicker than that of the chamfered part of the back side chamfered surface. Accordingly, compared with the wafer in the prior art, the number of the reproduction of the wafer can be increased only by the part which became thicker. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
