CONTACT FORMING METHOD, METHOD FOR MANUFACTURING FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing for a semiconductor device that realizes a contact having low resistivity. Ž<P>SOLUTION: The method for manufacturing includes a step of implanting a p-type or n-type impurity ion into a silicon portion of the semiconductor device that is to be made into an p-type or n-type silicon region, a step of forming a contact metal film on the surface of the contact region, following the ion implantation step, without carrying out heat treatment for activating the implanted ion, and a step of reacting the metal with the silicon portion by heating to form a silicide of the metal. It is preferable that the method include a step of activating the implanted ion by heat treatment that follows the formation of the metal film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž