| 摘要 |
The connection between a PTC element 22a corresponding to each semiconductor IC 11a and a power-supply line 25a is performed via a relay, a high voltage is supplied to the power-supply line 25a by sequentially turning on the relays, and a high voltage is supplied to each PTC element 22a in order, whereby it is possible to trip beforehand a PTC element 22a connected to a DC-defective semiconductor IC 11a. In this state, wafer level burn-in is performed together, which enables the PTC element 22a to be positively tripped during the burn-in for the DC defect of the semiconductor IC 11a, with the result that it is possible to increase the reliability of the burn-in.
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