摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device that reduces color mixing in a semiconductor at a photoelectric conversion unit constituting a pixel without lowering peak sensitivity of each color. SOLUTION: The solid-state imaging device has a pixel having an absorbing film 28 that absorbs short wavelength-side light and is formed on a photoelectric conversion unit 23G for necessary color light through an insulating film 25. COPYRIGHT: (C)2010,JPO&INPIT
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